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Schottky Barrier Diodes for General Purpose Applications Technical Data
1N5711 1N5712 5082-2300 Series 5082-2800 Series 5082-2900
Features
* Low Turn-On Voltage As Low as 0.34 V at 1 mA * Pico Second Switching Speed * High Breakdown Voltage Up to 70 V * Matched Characteristics Available
The 5082-2835 is a passivated Schottky diode in a low cost glass package. It is optimized for low turn-on voltage. The 5082-2835 is particularly well suited for the UHF mixing needs of the CATV marketplace. The 5082-2300 Series and 5082-2900 devices are unpassivated Schottky diodes in a glass package. These diodes have extremely low 1/f noise and are ideal for low noise mixing, and high sensitivity detecting. They are particularly well suited for use in Doppler or narrow band video receivers.
Outline 15
0.41 (.016) 0.36 (.014)
25.4 (1.00) MIN. 1.93 (.076) 1.73 (.068)
Description/Applications
The 1N5711, 1N5712, 5082-2800/ 10/11 are passivated Schottky barrier diodes which use a patented "guard ring" design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D converting, video detecting, frequency discriminating, sampling, and wave shaping.
4.32 (.170) 3.81 (.150) CATHODE
25.4 (1.00) MIN.
DIMENSIONS IN MILLIMETERS AND (INCHES).
Maximum Ratings
Junction Operating and Storage Temperature Range 5082-2303, -2900 .................................................................-60C to +100C 1N5711, 1N5712, 5082-2800/10/11 ....................................-65C to +200C 5082-2835 ............................................................................ -60C to +150C DC Power Dissipation (Measured in an infinite heat sink at TCASE = 25C) Derate linearly to zero at maximum rated temperature 5082-2303, -2900 .............................................................................. 100 mW 1N5711, 1N5712, 5082-2800/10/11 ................................................. 250 mW 5082-2835 ......................................................................................... 150 mW Peak Inverse Voltage ................................................................................. VBR
2
Package Characteristics
Outline 15 Lead Material ........................................................................................ Dumet Lead Finish .............................................................................. 95-5% Tin-Lead Max. Soldering Temperature ................................................ 260C for 5 sec Min. Lead Strength .................................................................... 4 pounds pull Typical Package Inductance 1N5711, 1N5712: ................................................................................ 2.0 nH 2800 Series: ........................................................................................ 2.0 nH 2300 Series, 2900: .............................................................................. 3.0 nH Typical Package Capacitance 1N5711, 1N5712: ................................................................................ 0.2 pF 2800 Series: ........................................................................................ 0.2 pF 2300 Series, 2900: ............................................................................ 0.07 pF The leads on the Outline 15 package should be restricted so that the bend starts at least 1/16 inch from the glass body. Outline 15 diodes are available on tape and reel. The tape and reel specification is patterned after RS-296-D.
Electrical Specifications at TA = 25C
General Purpose Diodes Min. Breakdown Voltage VBR (V) 70 70 20 20 15 8* IR = 10 A *IR = 100 A Max. Forward Voltage VF (mV) 410 410 410 550 410 340 IF = 1 mA VF = 1 V Max. at Forward Current IF (mA) 15 15 35 35 20 10* *VF = 0.45 V Max. Reverse Leakage Current IR (nA) at VR (V) 200 200 100 150 100 100 50 50 15 16 8 1 Max. Capacitance CT (pF) 2.0 2.0 1.2 1.2 1.2 1.0 VR = 0 V f =1.0 MHz
Part Number 5082-2800 1N5711 5082-2810 1N5712 5082-2811 5082-2835 Test Conditions
Package Outline 15 15 15 15 15 15
Note: Effective Carrier Lifetime () for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA except for 5082-2835 which is measured at 20 mA.
3
Low 1/f (Flicker) Noise Diodes Part Number 50822303 2900 Test Conditions Min. Breakdown Voltage VBR (V) 20 10 IR = 10 A Max. Forward Voltage VF (mV) 400 400 IF = 1 mA VF = 1 V Max. at Forward Current IF (mA) 35 20 Max. Reverse Leakage Current IR (nA) at VR (V) 500 100 15 5 Max. Capacitance CT (pF) 1.0 1.2 VR = 0 V f =1.0 MHz
Package Outline 15 15
Note: Effective Carrier Lifetime () for all these diodes is 100 ps maximum measured with Krakauer method at 20 mA.
Matched Pairs and Quads
Basic Part Number 50822900 2800 5082-2804 VF = 20 mV 5082-2805 VF = 20 mV 5082-2826 VF = 10 mV CO = 0.1 pF 5082-2080 VF = 10 mV CO = 0.1 pF Matched Pair Unconnected Matched Quad Unconnected Batch Matched[1]
Test Conditions VF at IF = 1.0, 10 mA VF at IF = 0.5, 5 mA *IF = 10 mA CO at f = 1.0 MHz VF at IF = 10 mA CO at f = 1.0 MHz VF at IF =10 mA CO at f = 1.0 MHz
2811
2835
Note: 1. Batch matched devices have a minimum batch size of 50 devices.
SPICE Parameters
Parameter BV CJ0 EG IBV IS N RS Units V pF eV A A 5082-2800 75 1.6 0.69 10E - 5 2.2 x 10E - 9 1.08 25 5082-2810 25 0.8 0.69 10E - 5 1.1 x 10E - 9 1.08 10 5082-2811 18 1.0 0.69 10E -5 0.3 x 10E - 8 1.08 10 5082-2835 9 0.7 0.69 10E - 5 2.2 x 10E - 8 1.08 5 5082-2303 25 0.7 0.69 10E - 5 7 x 1.0E-9 1.08 10 5082-2900 10 1.1 0.69 10E - 5 10E-8 1.08 15
PB PT M
V
0.6 2 0.5
0.6 2 0.5
0.6 2 0.5
0.56 2 0.5
0.64 2 0.5
0.64 2 0.5
4
Typical Parameters
100 10.000 1000
10
1,000
75 50
100C
1
50C 25C 0C
100
RD - DYNAMIC RESISTANCE ()
IF - FORWARD CURRENT (mA)
100
IR (nA)
25 TA = 25C
100
0.1
-50C
10
0.01
0
0.10
0.20
0.30
0.40
0.50
0.60
1
0
5 VBR (V)
10
15
10 0.01
0
10
100
VF - FORWARD VOLTAGE (V)
IF - FORWARD CURRENT (mA)
Figure 1. I-V Curve Showing Typical Temperature Variation for 5082-2300 Series and 5082-2900 Schottky Diodes.
1.2
Figure 2. 5082-2300 Series Typical Reverse Current vs. Reverse Voltage at Various Temperatures.
50
Figure 3. 5082-2300 Series and 5082-2900 Typical Dynamic Resistance (RD) vs. Forward Current (IF).
100,000 150 125 100 1000 75 50 100 25 10 0 TA = C 1 0 0.2 0.4 0.6 0.8 1.0 1.2
IF - FORWARD CURRENT (mA)
CT - CAPACITANCE (pF)
1.0 0.8 0.6 0.4 0.2 0 0 4 8 12 16 20 VR - REVERSE VOLTAGE (V) 5082-2900 5082-2303
10 5 1 0.5 +150C +100C +50C +25C 0C -50C
0.1 0.05
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
IR - REVERSE CURRENT (nA)
10,000
VF - FORWARD VOLTAGE (V)
VR - REVERSE VOLTAGE (V)
Figure 4. 5082-2300 and 5082-2900 Typical Capacitance vs. Reverse Voltage.
Figure 5. I-V Curve Showing Typical Temperature Variation for 5082-2800 or 1N5711 Schottky Diodes.
Figure 6. (5082-2800 OR 1N5711) Typical Variation of Reverse Current (IR) vs. Reverse Voltage (VR) at Various Temperatures.
10,000
12.0
100
IF - FORWARD CURRENT (mA)
1.5
10
IR - REVERSE CURRENT (nA)
CT - CAPACITANCE (pF)
150 125 1000 100 75 100 50 25 10 TA = C
1.0
1.0
+150C +100C +50C
0.5
0.1
+25C 0C -50C
0
0
10
20
30
40
50
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.0
0
5
10
15
20
25
30
VR - REVERSE VOLTAGE (V)
VF - FORWARD VOLTAGE (V)
VR - REVERSE VOLTAGE (V)
Figure 7. (5082-2800 or 1N5711) Typical Capacitance (CT) vs. Reverse Voltage (VR).
Figure 8. I-V Curve Showing Typical Temperature Variation for the 50822810 or 1N5712 Schottky Diode.
Figure 9. (5082-2810 or IN5712) Typical Variation of Reverse Current (IR) vs. Reverse Voltage (VR) at Various Temperatures.
5
Typical Parameters, continued
100
IF - FORWARD CURRENT (mA)
100,000 150 100 1000 50
IF - FORWARD CURRENT (mA) IR - REVERSE CURRENT (nA)
100
10
10,000
10
1.0 +150C +100C +50C +25C 0C -50C 0 0.2 0.4 0.6 0.8 1.0 1.2 VF - FORWARD VOLTAGE (V)
1.0
100
25 TA = C
0.1
0.1
10
+150C +100C +50C +25C 0C -50C
0.01
1
0.01 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1.0 1.2 VR - REVERSE VOLTAGE (V) VF - FORWARD VOLTAGE (V)
Figure 10. I-V Curve Showing Typical Temperature Variation for the 5082-2811 Schottky Diode.
100,000
IR - REVERSE CURRENT (nA)
Figure 11. (5082-2811) Typical Variation of Reverse Current (IR) vs. Reverse Voltage (VR) at Various Temperatures.
11.4
Figure 12. I-V Curve Showing Typical Temperature Variations for 5082-2835 Schottky Diode.
1000
RD - DYNAMIC RESISTANCE ()
5082-2800, 1N5711
+150C +125C +100C 1000 +75C 100 +50C +25C 10
CT - CAPACITANCE (pF)
1.2 1.0 0.8 0.6 0.4 0.2 0 5082-2810/2811 IN5712 5082-2835
10,000
100
5082-2811 5082-2811 1N5712
10
5082-2835 1 0 2 4 6 8 10
1
0
1
2
3
4
5
6
0
2
4
6
8
10
VR - REVERSE VOLTAGE (V)
VR - REVERSE VOLTAGE (V)
IF - FORWARD CURRENT (mA)
Figure 13. (5082-2835) Typical Variation of Reverse Current (IR) vs. Reverse Voltage (VR) at Various Temperatures.
Figure 14. Typical Capacitance (CT) vs. Reverse Voltage (VR).
Figure 15. Typical Dynamic Resistance (RD) vs. Forward Current (IF).
Diode Package Marking
1N5xxx 5082-xxxx would be marked: 1Nx xx xxx xx YWW YWW where xxxx are the last four digits of the 1Nxxxx or the 5082-xxxx part number. Y is the last digit of the calendar year. WW is the work week of manufacture. Examples of diodes manufactured during workweek 45 of 1999: 1N5712 5082-3080 would be marked: 1N5 30 712 80 945 945
www.semiconductor.agilent.com Data subject to change. Copyright (c) 1999 Agilent Technologies Obsoletes 5968-4304E 5968-7181E (11/99)

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